| PART |
Description |
Maker |
| AM29LV017D-120WCI AM29LV017D-120EC AM29LV017D-120W |
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:DPAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On-Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Continuous Drain Current - 100 Deg C:66A; Continuous Drain Current - 25 Deg C:93A RoHS Compliant: Yes
x8 Flash EEPROM
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x8闪存EEPROM
|
Advanced Linear Devices, Inc.
|
| BUZ902D BUZ903D |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
|
Magnatec
|
| KI4920DY |
Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
| KI4501ADY |
TrenchFET Power MOSFET Drain-Source Voltage Vds 30V
|
TY Semiconductor Co., Ltd
|
| ST662 ST662A ST662AB ST662ABD ST662ABN ST662AC ST6 |
From old datasheet system
DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:14A; On-Resistance, Rds(on):9mohm; Rds(on) Test
|
http://
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| KI1304BDL |
TrenchFET Power MOSFET 100 Rg Tested Drain-source voltage VDS 30 V
|
TY Semiconductor Co., Ltd
|
| 5N20V |
Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -12 V
|
TY Semiconductor Co., Ltd
|
| PT7A7515 PT7A7513 PT7A7535 PT7A7531 |
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:67A; On-Resistance, Rds(on):7.9mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:D2PAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No
3.08V Reset Active Low Supervisor
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
|
| STP5NK65Z STP5NK65ZFP |
N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET
JFET; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:100mA; Gate-Source Cutoff Voltage Max, Vgs(off):-9V; Continuous Drain Current, Id:100mA; Current Rating:100mA; Gate-Source Breakdown Voltage:-25V RoHS Compliant: No
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESHPower MOSFET
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESH⑩Power MOSFET
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESH?Power MOSFET
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| SP8910 SP8910KGMP1T SP8910KG SP8910KGMP1S |
5GHZ ±10 Fixed Modulus Divider
5GHZ 10 Fixed Modulus Divider
5GHZ ÷10 Fixed Modulus Divider(5GHZ ÷10超高速低功耗固定模数除法器)
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:30A; On-Resistance, Rds(on):0.028ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No
|
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
| 2N5266 2N5265 2N5267 2N5269 2N5268 2N5270 |
DRAIN-SOURCE VOLTAGE
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
| 2SK629 |
Drain Source Voltage-: VDSS= 100V(Min)
|
Inchange Semiconductor ...
|
